Detalls del llibre
- Describes spintronic applications in current and future magnetic recording devices
- Discusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modeling
- Explores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysis
- Investigates spintronic device write and read optimization in light of spintronic memristive effects
- Considers spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effects
- Proposes unique solutions for low-power spintronic device applications where memory is closely integrated with logic
Metallic Spintronic Devices aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.
- Autor/a Xiaobing Wang
- ISBN13 9781138072329
- ISBN10 113807232X
- Pàgines 274
- Any Edició 2017
- Fecha de publicación 29/03/2017
Ressenyes i valoracions
Metallic Spintronic Devices
- De
- Xiaobing Wang
- |
- ROUTLEDGE (2017)
- 9781138072329



